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Ion Implantation and Synthesis of Materials

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  • 280pages
  • 10 heures de lecture

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Focusing on the physics and materials science, this book delves into ion implantation and ion beam modification, crucial for silicon integrated circuit technology. It discusses the intricacies of ion-solid interactions, predicting ion ranges, and addressing lattice disorder. The text covers essential processes like shallow-junction formation and the innovative use of hydrogen ion beams for silicon slicing. Additionally, it explores topics such as ion-beam mixing, stresses, and sputtering, highlighting their significance in enhancing materials properties and performance.

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Ion Implantation and Synthesis of Materials, James W. Mayer, Michael Nastasi

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Année de publication
2010
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