Indium Gallium Nitride Nanostructures for Optoelectronic Applications

Auteurs

• Anna Haab

Paramètres

• Chimie
• Sciences naturelles

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This thesis explores the fabrication and characterization of nanowires made from the indium gallium nitride (InGaN) material system, which has gained prominence in optoelectronic applications. The use of gallium nitride (GaN) and InGaN heterostructures is particularly notable for their role in energy-efficient light sources, blue lasers for Blu-ray players, and display backlighting. The creation of nanostructures, especially nanowires, from this material holds promise for enhancing device efficiencies. Three fabrication approaches were investigated, starting with GaN nanowires produced by reactive ion etching (RIE) without lithographic structuring. Characterization of these nanowires, compared to their layer counterparts, revealed insights into the formation mechanism and allowed for control over their morphology. The nanowires demonstrated excellent optical properties, assessed through photoluminescence and transmission/reflection spectroscopy. Additionally, GaN nanowires were utilized as substrates for growing an InGaN shell via metal-organic vapour phase epitaxy (MOVPE), achieving high indium content. Furthermore, InN nanowires were grown on Si wafers without an aluminum nitride buffer layer or foreign metals, using metallic indium droplets to promote growth. These nanowires exhibited a V-shaped morphology with twin-plane symmetry, paving the way for further development in morphology, optoelectronic properties, and device i

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• Année de publication: 2018