The study introduces a novel technique for laser deposition of Aluminum and Copper nanoparticles on silicon wafer substrates. Thin films have been created on silicon wafers from one-side coated glass by sputtering nanoparticles using laser radiation, with an optimized distance of 300 μm between the donor film and substrate. Once the laser energy threshold is reached, particles are expelled from the donor and transferred to the substrate, leading to thin film formation through four stages: nucleation, growth, coalescence, and thickening. To enhance film thickness, electroless nickel and gold are plated on the particles for adhesion measurements. A comprehensive optimization guide for deposition parameters was developed, utilizing various Nd lasers with differing pulse durations (picosecond and nanosecond) and wavelengths (Infrared and Green). The study also explores the effects of these parameters on adhesion tests and the deposition mechanism. Copper and Aluminum exhibit similar reactions in Infrared laser processing but behave differently at various wavelengths, affecting the thin film's roughness. The absorption characteristics of Al and Cu are analyzed using Energy-dispersive X-ray spectroscopy (EDX) and Focused Ion Beam (FIB) analysis. Identifying the laser energy threshold and pulse parameters is crucial for optimal deposition results using the laser direct writing (LDW) method, which offers a high-resolution, masked-less
