Marian A. Herman Livres

Molecular Beam Epitaxy explores the advanced techniques and principles of a method used for growing thin films of semiconductors and other materials with high precision. The book delves into the fundamental physics, engineering aspects, and various applications of this technology in electronics and optoelectronics. It also discusses the latest developments and future trends in the field, making it a valuable resource for researchers and professionals seeking to understand the complexities and innovations in material science and nanotechnology.

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this second edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and in-growth control of the MBE crystallization process of strained-layer structures. Out-of-date material has been removed.