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Raman spectroscopy serves as a crucial technique for material characterization, enabling optical assessment of mechanical stress and material identification. It excels in analyzing stress fields in materials like silicon and silicon carbide, particularly under mechanical loading. Precise stress measurements require careful consideration of thermally induced shifts in Raman peaks, as focused light can locally heat samples. This understanding aids in optimizing manufacturing processes and enhancing the reliability of micro devices, while also facilitating compositional mapping of heterogeneous materials and detecting alterations induced by the excitation laser.
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Raman spectroscopy of laser induced material alterations, Michael Bauer
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- Année de publication
- 2015
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